Part, HYA. Category, Memory => SRAM. Description, 8kx8-bit CMOS SRAM. Company, Hynix Semiconductor. Datasheet, Download HYA datasheet. HYA Series 8Kx8bit CMOS SRAM DESCRIPTION The HYA is a high- speed, low power and 8,x8-bits CMOS static RAM fabricated using Hyundai’s . Hynix Semiconductor HYA datasheet, 8KX8-Bit CMOS SRAM (1-page), HYA datasheet, HYA pdf, HYA datasheet pdf, HYA pinouts.
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This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns. Using the CMOS technology, supply voltage from 2.
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Current value is max. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for an extended period may affect reliability.
At any given temperature and datashete condition, tchz max. DOUT is the read data of the new address. The input signals in the opposite phase leading to the outputs should not be applied. History Issue Date Remark 0. Features Very high speed: It has bit of tri-state address pins providing a maximum ofor address.
Near-Zero propagation delay 5-ohm switches connect inputs to outputs when enabled Direct bus connection when switches are ON Ultra Low Quiescent Power 0.
HY6264A-(I) Series 8Kx8bit CMOS SRAM
It is capable of 18 functions and a total of 75 commands. On-chip address and data latches Self-timed. Charge Injection, 2pC typ. They possess high noise. All units feature integral clamp diodes for switching. They possess high noise immunity. A 4-bit address code determines.
Their primary use is where low. It encodes data and address pins into a serial coded waveform suitable. The device is used primarily as a 6-bit ddatasheet storage register. The information on the.
Features High PD sensitivity optimized for red light Data: NRZ signal Low power consumption for extended battery life Built-in threshold control for improved noise Margin The product itself will remain.
Built-in controller S6A or Equivalent 3. Using sub-micron CMOS technology. The is specified in compliance.
The peak of unnecessary EMI can be attenuated by making the oscillation frequency slightly. Start display at page:. Dayna Francis datasheeg years ago Hy62644a It has bit of tri-state address pins providing a maximum ofor address More information.
Single-shot and continuous More information. Address Compare amd Write Enable. Protect Register V PP. On-chip address and data latches Self-timed More information. The flip-flops appear More information. They possess high noise More information.
All units feature integral clamp diodes for switching More information. They feature More information.
HYALP, BG-ELECTRONICS HYALP, HYALP, HYAL, HYA, HY
They possess high noise immunity, More information. Placement Features More information. A 4-bit address code determines More information.
Their primary use is where low More information. It encodes data and address pins into a serial coded waveform suitable More information.
The information on the Fatasheet information. NRZ signal Low power consumption for extended battery life Built-in threshold control for improved noise Margin The product itself will remain More information. The is specified in compliance More information. Product specification IC24 Data Handbook. Freescale Semiconductor Data Sheet. The peak of unnecessary EMI can be attenuated by making the oscillation frequency slightly More information.